bfr 182t dec-16-1998 1 npn silicon rf transistor preliminary data for low noise, high-gain broadband amplifiers at collector currents from 1 ma to 20 ma f t = 8 ghz f = 1.2 db at 900 mhz vps05996 1 2 3 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package bfr 182t rgs 1 = b 2 = e 3 = c sc-75 maximum ratings parameter symbol unit value collector-emitter voltage 12 v ceo v v ces collector-emitter voltage 20 collector-base voltage v cbo 20 emitter-base voltage v ebo 2 collector current i c 35 ma base current i b 4 total power dissipation , t s = 75 c f) p tot 250 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t stg -65 ... 150 thermal resistance junction - soldering point r thjs 300 k/w 1 t s is measured on the collector lead at the soldering point to the pcb
bfr 182t dec-16-1998 2 electrical characteristics at t a = 25c, unless otherwise specified. values unit parameter symbol typ. max. min. dc characteristics - collector-emitter breakdown voltage i c = 1 ma, i b = 0 12 v (br)ceo v - - 100 - i ces collector-emitter cutoff current v ce = 20 v, v be = 0 a i cbo - 100 collector-base cutoff current v cb = 10 v, i e = 0 - na i ebo - - a 1 emitter-base cutoff current v eb = 1 v, i c = 0 h fe 50 dc current gain i c = 10 ma, v ce = 8 v 100 200 -
bfr 182t dec-16-1998 3 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit typ. min. max. ac characteristics (verified by random sampling) transition frequency i c = 15 ma, v ce = 8 v, f = 500 mhz ghz f t - 8 6 collector-base capacitance v cb = 10 v, f = 1 mhz 0.33 0.5 pf c cb - 0.18 - c ce collector-emitter capacitance v ce = 10 v, f = 1 mhz - emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - - 0.6 noise figure i c = 3 ma, v ce = 8 v, z s = z sopt , f = 900 mhz f = 1.8 ghz f db - - - - 1.2 1.9 power gain, maximum stable 1) i c = 10 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 900 mhz 20 - - g ms g ma - 13 power gain, maximum available 2) i c = 10 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 1.8 ghz - transducer gain i c = 10 ma, v ce = 8 v, z s = z l = 50 , f = 900 mhz f = 1.8 ghz | s 21e | 2 - - - - 16 10 1 g ms = | s 21 / s 12 | 2 g ma = | s 21 / s 12 | (k-(k 2 -1) 1/2 )
bfr 182t dec-16-1998 4 total power dissipation p tot = f ( t a *, t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 mw 300 p tot tbd permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 k/w r thjs tbd permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc tbd
bfr 182t dec-16-1998 5 collector-base capacitance c cb = f ( v cb ) f = 1mhz 0 5 10 15 v 25 v cb 0.0 0.1 0.2 0.3 0.4 pf 0.6 c cb transition frequency f t = f ( i c ) v ce = parameter 0 5 10 15 20 ma 30 i c 0 1 2 3 4 5 6 7 ghz 9 f t 10v 8v 5v 3v 2v 1v 0.7v power gain g ma , g ms = f ( i c ) f = 0.9ghz v ce = parameter 0 4 8 12 16 20 24 ma 32 i c 7 10 13 16 db 22 g 10v 5v 3v 2v 1v power gain g ma , g ms = f ( i c ) f = 1.8ghz v ce = parameter 0 4 8 12 16 20 24 ma 32 i c 0 3 6 9 db 15 g ma 10v 5v 3v 2v 1v
bfr 182t dec-16-1998 6 power gain g ma , g ms = f ( v ce ):_____ | s 21 | 2 = f ( v ce ):--------- f = parameter 0 3 6 v 12 v ce 0 2 4 6 8 10 12 14 16 18 db 22 g 0.9ghz 1.8ghz 0.9ghz 1.8ghz i c =10ma intermodulation intercept point ip 3 = f ( i c ) (3rd order, output, z s = z l =50 ) v ce = parameter, f = 900mhz 0 5 10 15 20 ma 30 i c 0 5 10 15 20 dbm 30 ip 3 8v 5v 3v 2v 1v power gain g ma , g ms = f ( f ) v ce = parameter 0 1 2 3 4 5 ghz 7 f 0 5 10 15 20 25 30 35 db 45 g i c =10ma 10v 5v 1v power gain | s 21 | 2 = f ( f ) v ce = parameter 0 1 2 3 4 5 ghz 7 f -5 0 5 10 15 20 dbm 30 s 21 10v 5v 1v i c =10ma
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